INTEGRATED CIRCUIT STRUCTURE TO RESOLVE DEEP-WELL PLASMA CHARGING PROBLEM AND METHOD OF FORMING THE SAME

摘要

During various processing operations, ions from process plasma may be transfer to a deep n-well (DNW) formed under devices structures. A reverse-biased diode may be connected to the signal line to protect a gate dielectric formed outside the DNW and is connected to the drain of the transistor formed inside the DNW.