GAN SUBSTRATE, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

Provided are a GaN substrate, a semiconductor device and a manufacturing method thereof. The GaN substrate comprises: a GaN base (401); an AlGaN layer (402), arranged on the GaN base; and a p-type conductive layer (403), arranged on an active area of the AlGaN layer, and used for consuming surface state negative electrons on the AlGaN layer and neutralizing dangling bonds on the AlGaN layer. By forming the p-type conductive layer on the AlGaN layer, the n-type surface state negative electrons on the AlGaN layer can be consumed and the dangling bonds on the section on the AlGaN layer can be neutralized by hole carriers in the p-type conductive layer, so as to prevent the forming of a virtual gate, thereby suppressing the current collapse effect of the semiconductor device manufactured by the GaN substrate, improving the performance of the semiconductor device and improving the reliability thereof.