| 摘要 |
<p>Provided is a temperature sensor that: is not susceptible to an increase in resistance in an electrode structure with respect to a TiAlN thermistor material layer, even in a high-temperature environment; can be directly formed on a film, or the like, without baking; and is highly reliable due to having high heat resistance. Further provided is a method for producing the temperature sensor. The temperature sensor is provided with: an insulating substrate (2); a thin-film thermistor part (3) formed on top of the insulating substrate (2); and a pair of pattern electrodes(4) that has a pair of counter electrode parts (4a), which face each other, disposed on the thin-film thermistor part, and that is formed on the insulating substrate. The thin-film thermistor part is formed by a TiAlN thermistor material, and the pattern electrodes comprise a TiN joining layer (5) formed on the thin-film thermistor, and an electrode layer (6) formed by a precious metal on the joining layer.</p> |
