发明名称 LIGHT EMITTING DIODE FABRICATION PROCESS
摘要 <p>[Problem] To fabricate a light emitting diode in which the luminescence within a light emitting chip can be emitted efficiently to the exterior of the chip by means of a dielectric antenna. [Solution] A light emitting diode fabrication method fabricates a light emitting diode through the following steps: a first masking step for masking the surface of a light emitting chip (1) on the surface of which a surface electrode (3) is disposed; a first etching step in which the masked surface of the light emitting chip (1) is dry etched to form a plurality of concave antenna sections (7); a coating step in which a dielectric layer (12) is disposed on the surface of the light emitting chip (1) where the concave antenna sections (7) are disposed so that the dielectric layer (12) fills the concave antenna sections (7); a second masking step in which the surface of the concave antenna sections (7), which is the surface of the dielectric layer (12) obtained in the coating step, is masked; a second etching step in which, after the second masking step, the chip is dry etched to remove the unmasked portions to form a dielectric antenna (2) that protrudes from the surface of the light emitting chip (1); and a mask removal step in which the mask formed in the second masking step is removed.</p>
申请公布号 WO2013146623(A1) 申请公布日期 2013.10.03
申请号 WO2013JP58448 申请日期 2013.03.23
申请人 DAIICHI JITSUGYO CO.,LTD. 发明人 NAGATA, HISAO;TANIFUJI, RYOICHI;SUZUKI, FUMIO
分类号 H01L33/22 主分类号 H01L33/22
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