发明名称 |
DOPED AI PASTE FOR LOCAL ALLOYED JUNCTION FORMATION WITH LOW CONTACT RESISTANCE |
摘要 |
<p>Embodiments of the invention generally relate to solar cells having reduced carrier recombination and methods of forming the same. The solar cells have eutectic local contacts and passivation layers which reduce recombination by facilitating formation of a back surface field (BSF). A patterned aluminum back contact doped with a Group III element is disposed on the passivation layer for removing current form the solar cell. The methods of forming the solar cells include depositing a passivation layer including aluminum oxide and silicon nitride on a back surface of a solar cell, and then forming openings through the passivation layer. An aluminum back contact doped with a Group III element is disposed on the passivation layer in a pattern covering the holes, and thermally processed to form a silicon-aluminum eutectic within the openings.</p> |
申请公布号 |
WO2013148047(A1) |
申请公布日期 |
2013.10.03 |
申请号 |
WO2013US28149 |
申请日期 |
2013.02.28 |
申请人 |
APPLIED MATERIALS, INC.;GEE, JAMES M. |
发明人 |
GEE, JAMES M. |
分类号 |
H01L31/042;H01L31/0216;H01L31/18 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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