| 摘要 |
<p>Provided are a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a substrate (1), a shallow trench isolation (5) in the substrate (1), and a stress releasing layer (4) between the substrate (1) and the shallow trench isolation (5). The soft stress releasing layer (4) is added between the substrate (1) and the shallow trench isolation (5), so that the stress accumulated in the process of forming the shallow trench isolation (5) is released, thereby reducing current leakage of the device substrate and improving the device reliability.</p> |
