NITRIDE COMPOUND SEMICONDUCTOR LAYER, NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, NITRIDE COMPOUND SEMICONDUCTOR LAYER MANUFACTURING METHOD AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a nitride compound semiconductor layer which uses a nitride compound semiconductor and has high luminous efficiency; and provide a nitride semiconductor light-emitting device, a nitride compound semiconductor layer manufacturing method and a nitride semiconductor light-emitting device manufacturing method.SOLUTION: A gallium nitride compound semiconductor layer of a present embodiment has a (11-24) plane which is formed on a substrate as a layer surface after performing a surface treatment on the substrate having a perovskite-type crystal structure having a (101) plane or a (011) plane by using a mixed solution of phosphoric acid and sulfuric acid. Accordingly, a nitride semiconductor light-emitting device having high luminous efficiency can be obtained because the GaN compound semiconductor having a semipolar surface of the (11-24) plane as the layer surface which is a crystal plane different from a (0001) plane can be formed from an NdGaOsubstrate.