| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for easily manufacturing a semiconductor layer including a group I-III-VI compound doped with an antimony element.SOLUTION: A solution for semiconductor layer formation includes an antimony complex where an antimony element and chalcogen element-containing organic compound are bound, a group I-B element and a group III-B element. A semiconductor layer manufacturing method comprises: a process of forming films by using the solution for semiconductor layer formation; and a process of manufacturing a semiconductor layer including a group I-III-VI compound doped with an antimony element, by heating the films. |
