MEMORY DEVICES AND METHODS HAVING ADAPTABLE READ THRESHOLD LEVELS
摘要
<p>A method can include determining at least one use characteristic for the memory cells comprising a solid electrolyte, the use characteristic corresponding to a number of times the memory cells have been programmed to at least one impedance level; and adjusting a read threshold level for the memory cells based on at least the use characteristic, the read threshold level determining data values stored in the memory cells in a read operation.</p>
申请公布号
WO2013148777(A1)
申请公布日期
2013.10.03
申请号
WO2013US34015
申请日期
2013.03.27
申请人
ADESTO TECHNOLOGIES CORPORATION;GOPINATH, VENKATESH, P.;KOUSHAN, FOROOZAN, SARAH;LEWIS, DERRIC, JAWAHER, HERMAN
发明人
GOPINATH, VENKATESH, P.;KOUSHAN, FOROOZAN, SARAH;LEWIS, DERRIC, JAWAHER, HERMAN