发明名称 MEMORY DEVICES AND METHODS HAVING ADAPTABLE READ THRESHOLD LEVELS
摘要 <p>A method can include determining at least one use characteristic for the memory cells comprising a solid electrolyte, the use characteristic corresponding to a number of times the memory cells have been programmed to at least one impedance level; and adjusting a read threshold level for the memory cells based on at least the use characteristic, the read threshold level determining data values stored in the memory cells in a read operation.</p>
申请公布号 WO2013148777(A1) 申请公布日期 2013.10.03
申请号 WO2013US34015 申请日期 2013.03.27
申请人 ADESTO TECHNOLOGIES CORPORATION;GOPINATH, VENKATESH, P.;KOUSHAN, FOROOZAN, SARAH;LEWIS, DERRIC, JAWAHER, HERMAN 发明人 GOPINATH, VENKATESH, P.;KOUSHAN, FOROOZAN, SARAH;LEWIS, DERRIC, JAWAHER, HERMAN
分类号 H01L47/00 主分类号 H01L47/00
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