| 摘要 |
<p>Provided is a manufacturing method of a semiconductor device, comprising the following steps: forming a shallow trench in a substrate (1); forming a shallow trench filling layer (4) in the shallow trench; forming a gasket cover layer (5) on the shallow trench filling layer; and implanting ion in the shallow trench filling layer and performing annealing, to form a shallow trench isolation (6). Through the method, an insulation material is formed by filling a material and implanting ion in the shallow trench, and the compressive stress is exerted to the active region of a substrate due to volume expansion of the filled material, thereby improving the carrier mobility of a future channel region, and improving the device performance.</p> |
