| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor device which suppresses the occurrence of shrinkage cavities and achieves good heat radiation performance and high productivity.SOLUTION: A semiconductor device includes: a substrate 4 having a plate shape, having conductor patterns 2 on a first main surface 3a and a second main surface 3b, the substrate 4 where power semiconductor elements 1 are joined to the conductor pattern on the first main surface; and a heat spreader 5 including a third main surface 5a and a fourth main surface 5b. The substrate and the heat spreader are joined by solder 6 so as to face each other. The power semiconductor device includes solder non-wet parts 111 and wet parts, which are alternately arranged along an outer periphery of a solder joint part, thereby controlling surface tension of the solder. |
