发明名称 |
SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor element and a manufacturing method of the same, which enables efficient growing of a multiquantum well structure having a large number of pairs while ensuring a good crystal quality.SOLUTION: A semiconductor element of a present embodiment is a semiconductor element of a group III-V compound semiconductor and comprises: a substrate of a group III-V compound semiconductor; a multiquantum well structure of a group III-V compound semiconductor positioned on the substrate; and a layer which is positioned on the multiquantum well structure and includes a group III-V compound semiconductor. The multiquantum well structure includes 50 pairs of quantum wells and over and does not have a regrown interface between a bottom face of the multiquantum structure and a top face of the layer including the group III-V compound semiconductor. |
申请公布号 |
JP2013201465(A) |
申请公布日期 |
2013.10.03 |
申请号 |
JP20130145744 |
申请日期 |
2013.07.11 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
FUJII KEI;ISHIZUKA TAKASHI;AKITA KATSUSHI;NAGAI YOICHI;TANABE TATSUYA |
分类号 |
H01L31/10 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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