发明名称 SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To obtain a semiconductor element and a manufacturing method of the same, which enables efficient growing of a multiquantum well structure having a large number of pairs while ensuring a good crystal quality.SOLUTION: A semiconductor element of a present embodiment is a semiconductor element of a group III-V compound semiconductor and comprises: a substrate of a group III-V compound semiconductor; a multiquantum well structure of a group III-V compound semiconductor positioned on the substrate; and a layer which is positioned on the multiquantum well structure and includes a group III-V compound semiconductor. The multiquantum well structure includes 50 pairs of quantum wells and over and does not have a regrown interface between a bottom face of the multiquantum structure and a top face of the layer including the group III-V compound semiconductor.
申请公布号 JP2013201465(A) 申请公布日期 2013.10.03
申请号 JP20130145744 申请日期 2013.07.11
申请人 SUMITOMO ELECTRIC IND LTD 发明人 FUJII KEI;ISHIZUKA TAKASHI;AKITA KATSUSHI;NAGAI YOICHI;TANABE TATSUYA
分类号 H01L31/10 主分类号 H01L31/10
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