发明名称 MEMORY HAVING MEMORY CELL STRING AND COUPLING COMPONENTS
摘要 Some embodiments include apparatuses and methods having a conductive line, a memory cell string including memory cells located in different levels the apparatus, and a select circuit including a select transistor and a coupling component coupled between the conductive line and the memory cell string. Other embodiments including additional apparatuses and methods are described.
申请公布号 US2013258745(A1) 申请公布日期 2013.10.03
申请号 US201213436625 申请日期 2012.03.30
申请人 TANZAWA TORU;MICRON TECHNOLOGY, INC. 发明人 TANZAWA TORU
分类号 G11C5/06 主分类号 G11C5/06
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