发明名称 |
RADIO-FREQUENCY CLASS D MOSFET AMPLIFIER MODULE |
摘要 |
In a radio-frequency class D MOSFET amplifier module (10) suitable for operation from supply voltages >= 100 V and at output powers >= 500 W and frequencies >= 3 MHz, comprising a half bridge formed from two series-connected switching elements (11, 12) embodied as MOSFETs and at least one driver (15), a driver supply voltage connection (43) and an output connection (24a, 24b) are arranged on an identical connection side of the amplifier module (10). |
申请公布号 |
WO2013075706(A3) |
申请公布日期 |
2013.10.03 |
申请号 |
WO2012DE100355 |
申请日期 |
2012.11.22 |
申请人 |
HUETTINGER ELEKTRONIK GMBH + CO. KG |
发明人 |
KIRCHMEIER, THOMAS;GLUECK, MICHAEL;MOURICK, PAUL |
分类号 |
H03F3/217 |
主分类号 |
H03F3/217 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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