发明名称 RADIO-FREQUENCY CLASS D MOSFET AMPLIFIER MODULE
摘要 In a radio-frequency class D MOSFET amplifier module (10) suitable for operation from supply voltages >= 100 V and at output powers >= 500 W and frequencies >= 3 MHz, comprising a half bridge formed from two series-connected switching elements (11, 12) embodied as MOSFETs and at least one driver (15), a driver supply voltage connection (43) and an output connection (24a, 24b) are arranged on an identical connection side of the amplifier module (10).
申请公布号 WO2013075706(A3) 申请公布日期 2013.10.03
申请号 WO2012DE100355 申请日期 2012.11.22
申请人 HUETTINGER ELEKTRONIK GMBH + CO. KG 发明人 KIRCHMEIER, THOMAS;GLUECK, MICHAEL;MOURICK, PAUL
分类号 H03F3/217 主分类号 H03F3/217
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