发明名称 |
INLINE METHOD TO MONITOR ONO STACK QUALITY |
摘要 |
<p>Embodiments of structures and methods for determining operating characteristics of a non-volatile memory transistor comprising a charge-storage-layer and a tunneling layer are described. In one embodiment, the method comprises: forming on a substrate a structure including a nitrided tunneling-layer and a charge-storage-layer overlying the tunneling-layer comprising a first charge-storage layer adjacent to the tunneling-layer, and a second charge-storage layer overlying the first charge-storage layer, wherein the first charge-storage layer is separated from the second charge-storage layer by a antitunneling layer comprising an oxide; depositing a positive charge on the charge-storage layer and determining a first voltage to establish a first leakage current through the charge-storage-layer and the tunneling-layer; depositing a negative charge on the charge storage- layer and determining a second voltage to establish a second leakage current through the charge-storage-layer and the tunneling-layer; and determining a differential voltage by calculating a difference between the first and second voltages.</p> |
申请公布号 |
WO2013148090(A2) |
申请公布日期 |
2013.10.03 |
申请号 |
WO2013US29290 |
申请日期 |
2013.03.06 |
申请人 |
CYPRESS SEMICONDUCTOR CORPORATION;YANG, YU;KRISHNASWAMY, RAMKUMAR |
发明人 |
YANG, YU;KRISHNASWAMY, RAMKUMAR |
分类号 |
H01L29/792;H01L21/66 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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