发明名称 Semiconductor Device and Method of Forming Protective Coating Material Over Semiconductor Wafer to Reduce Lamination Tape Residue
摘要 A semiconductor device has a build-up interconnect structure formed over an active surface of a semiconductor wafer containing a plurality of semiconductor die separated by a saw street. An insulating layer is formed over the interconnect structure. Bumps are formed over the interconnect structure. A protective coating material is deposited over the insulating layer and saw street. A lamination tape is applied over the coating material. A portion of a back surface of the semiconductor wafer is removed. A mounting tape is applied over the back surface. The lamination tape is removed while leaving the coating material over the insulating layer and saw street. A first channel is formed through the saw street extending partially through the semiconductor wafer. The coating material is removed after forming the first channel. A second channel is formed through the saw street and the mounting tape is removed to singulate the semiconductor wafer.
申请公布号 US2013256840(A1) 申请公布日期 2013.10.03
申请号 US201313906489 申请日期 2013.05.31
申请人 STATS CHIPPAC, LTD. 发明人 YUN JAEUN;LEE HUNTEAK;CHAI SEUNGYONG;KO WONJUN
分类号 H01L23/544 主分类号 H01L23/544
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