发明名称 STACKED SEMICONDUCTOR COMPONENTS WITH UNIVERSAL INTERCONNECT FOOTPRINT
摘要 A method of manufacturing is provided that includes fabricating a first set of interconnect structures on a side of a first semiconductor substrate. The first semiconductor substrate is operable to have at least one of plural semiconductor substrates stacked on the side. The first set of interconnect structures is arranged in a pattern. Each of the plural semiconductor substrates has a second set of interconnect structures arranged in the pattern, one of the plural semiconductor substrates has a smallest footprint of the plural semiconductor substrates. The pattern has a footprint smaller than the smallest footprint of the plural semiconductor substrates.
申请公布号 US2013256895(A1) 申请公布日期 2013.10.03
申请号 US201213436124 申请日期 2012.03.30
申请人 SU MICHAEL;BLACK BRYAN;SIEGEL JOE;MCLELLAN NEIL;ALFANO MICHAEL 发明人 SU MICHAEL;BLACK BRYAN;SIEGEL JOE;MCLELLAN NEIL;ALFANO MICHAEL
分类号 H01L23/538;H01L21/768 主分类号 H01L23/538
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