发明名称 |
PASSIVE DEVICES FOR FINFET INTEGRATED CIRCUIT TECHNOLOGIES |
摘要 |
Device structures, design structures, and fabrication methods for passive devices that may be used as electrostatic discharge protection devices in fin-type field-effect transistor integrated circuit technologies. A device region is formed in a trench and is coupled with a handle wafer of a semiconductor-on-insulator substrate. The device region extends through a buried insulator layer of the semiconductor-on-insulator substrate toward a top surface of a device layer of the semiconductor-on-insulator substrate. The device region is comprised of lightly-doped semiconductor material. The device structure further includes a doped region formed in the device region and that defines a junction. A portion of the device region is laterally positioned between the doped region and the buried insulator layer of the semiconductor-on-insulator substrate. Another region of the device layer may be patterned to form fins for fin-type field-effect transistors.
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申请公布号 |
US2013256748(A1) |
申请公布日期 |
2013.10.03 |
申请号 |
US201213431414 |
申请日期 |
2012.03.27 |
申请人 |
CLARK, JR. WILLIAM F.;GAUTHIER, JR. ROBERT J.;HOOK TERENCE B.;LI JUNJUN;STANDAERT THEODORUS E.;WALLNER THOMAS A.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CLARK, JR. WILLIAM F.;GAUTHIER, JR. ROBERT J.;HOOK TERENCE B.;LI JUNJUN;STANDAERT THEODORUS E.;WALLNER THOMAS A. |
分类号 |
H01L29/73;G06F17/50;H01L21/331 |
主分类号 |
H01L29/73 |
代理机构 |
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地址 |
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