SEMICONDUCTOR DEVICE

摘要

An N-type SiC layer (2) is formed on a surface layer on a surface side of an N-type SiC substrate (1) so as to be used as a base layer. A P-type region (3) is formed on a surface of the N-type SiC layer (2), and an N-type source region (4) is selectively formed on a surface of the P-type region (3). Also, a source electrode (8) is formed on a surface of the N-type source region (4), and a drain electrode (9) is formed on a back surface side (the other surface side) of the N-type SiC substrate (1). The gate electrode (7) is formed only on the surface of the P-type region (3) via a gate insulating film (oxide film) (6). Therefore, no high voltage is applied between the drain electrode (9) and the gate electrode (7) by a voltage application stop toward the gate electrode (7) or the like, and no large electric field is applied to the gate insulating film (6). Accordingly, the semiconductor device according to the present invention is capable of maintaining the inherent MOSFET function and improving breakdown resistance and reliability of the insulating film.