CONTACT STRUCTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A contact structure of a semiconductor device is provided to improve device performance by transferring enough the amount of strain to the inner part of a channel region. CONSTITUTION: A strained material (208) is arranged in a cavity. A first metal layer (222) is arranged on the strained material. A dielectric layer (224) is arranged on the first metal layer. The dielectric layer has a thickness of 1 to 10 nm. A second metal layer (228) is arranged on the dielectric layer.