发明名称 |
THIN FILM TRANSISTOR, DISPLAY DEVICE HAVING THE SAME, AND MANUFACTURING METHOD OF THE SAME |
摘要 |
<p>PURPOSE: A thin film transistor, a display device having the same, and a method for manufacturing the same are provided to stably operate the display device at low power level by using a low off current due to the low density of hole carriers. CONSTITUTION: A channel part (CHN) is provided between a source electrode and a drain electrode. The source electrode includes a first doping part. The drain electrode includes a second doping part. A gate electrode (GE) is formed on the channel part and insulated from the channel part. A source electrode, a drain electrode, and a channel part are provided on the same surface.</p> |
申请公布号 |
KR20130107937(A) |
申请公布日期 |
2013.10.02 |
申请号 |
KR20120030137 |
申请日期 |
2012.03.23 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
CHOI, TAE YOUNG;KIM, BO SUNG;LEE, BYUNG JU;JO, KANG MOON |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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