发明名称 THIN FILM TRANSISTOR, DISPLAY DEVICE HAVING THE SAME, AND MANUFACTURING METHOD OF THE SAME
摘要 <p>PURPOSE: A thin film transistor, a display device having the same, and a method for manufacturing the same are provided to stably operate the display device at low power level by using a low off current due to the low density of hole carriers. CONSTITUTION: A channel part (CHN) is provided between a source electrode and a drain electrode. The source electrode includes a first doping part. The drain electrode includes a second doping part. A gate electrode (GE) is formed on the channel part and insulated from the channel part. A source electrode, a drain electrode, and a channel part are provided on the same surface.</p>
申请公布号 KR20130107937(A) 申请公布日期 2013.10.02
申请号 KR20120030137 申请日期 2012.03.23
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 CHOI, TAE YOUNG;KIM, BO SUNG;LEE, BYUNG JU;JO, KANG MOON
分类号 H01L29/786;H01L21/336 主分类号 H01L29/786
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