| 摘要 |
<p>PURPOSE: A semiconductor device and a method for manufacturing the same are provided to obtain an excellent driving current property by forming an additional gate in the lower part of a channel region. CONSTITUTION: A first gate electrode is formed along the surface of a first insulating layer. A second insulating layer is formed in the upper part of the first gate electrode. A silicon layer (300) is formed along the surface of the first gate electrode. A second gate electrode is formed on the silicon layer. A third insulating layer is formed in the upper part of the second gate electrode.</p> |
