| 摘要 |
PURPOSE: A light emitting device and a manufacturing method thereof are provided to implement a nitride light emitting device with an improved electric property and to obtain a high hall effect. CONSTITUTION: A buffer layer(120) is formed on a substrate(110). A nitride layer(130) is formed on the buffer layer with a preset thickness. A first nitride semiconductor layer(140) is formed on the nitride layer. The first nitride semiconductor layer includes at least one of a GaN layer, an AlGaN layer or a silicon doped AlGaN layer. An active layer(150) is formed on the first nitride semiconductor layer. A second nitride semiconductor layer(160) is formed on the active layer and is composed of a carbon doped AlxGa1-xN layer. [Reference numerals] (110) Substrate; (120) Buffer layer; (130) Nitride layer; (140) First nitride semiconductor layer; (150) Active layer; (160) Second nitride semiconductor layer |
