| 摘要 |
<p>PURPOSE: A variable resistance memory device and a method for fabricating the same are provided to increase an operation margin by increasing oxygen vacancy concentrations in a variable resistance layer. CONSTITUTION: A first variable resistance layer (110) is formed between a first electrode and a second electrode. The first and the second electrode include a metal that does not react with a metal oxide, or a metal nitride. The first variable resistance layer includes two or more kinds of metal oxides. A second variable resistance layer (130) is formed between the first variable resistance layer and the second electrode. The second variable resistance layer includes a metal oxide.</p> |
