| 摘要 |
<p>PURPOSE: A solid-state imaging device and a camera are provided to prevent a generation of dark current by forming a conductivity type impurity layer. CONSTITUTION: Contact regions are formed in a semiconductor substrate. At least one penetrating electrode is formed in the contact regions respectively. The penetrating electrode penetrates from a first surface to a second surface. First pads are formed on the second surface. The first pads are extended in a first direction facing from the contact region to a pixel array (120).</p> |
