PLASMA ETCHING OF DIAMOND SURFACES

摘要

The present invention relates to a polycrystalline CVD diamond material comprising a surface having a surface roughness Rq of less than 5 nm, wherein said surface is damage free to the extent that one or both of the following criteria are fulfilled:
(a) if an anisotropic thermal revealing etch is applied thereto, a number density of defects revealed by the anisotropic thermal revealing etch is less than 100 per mm 2 ; and
(b) if a backscattering ion beam analysis is applied thereto, a backscattered ion yield is less than 5% of incident ions.