| 摘要 |
<p>A phase-change memory cell 10 comprising: at least a reference electrical terminal T3; at least two electrical terminals T1, T2 that are configurable to be supplied with respective electrical signals S1, S2 and at least a phase-change material 11such as germanium antimony tellurium alloy that is provided between, and coupled to each of, the reference electrical terminal T3 and the two electrical terminals T1, T2, the phase-change material 11 being operable in one of at least two reversibly transformable phases, an amorphous phase 11' and a crystalline phase 11", a transition from one phase to the other phase occurring in response to a corresponding phase-altering electrical signal being applied to the phase-change material 11, wherein when the phase-change memory cell 10 is in use: the respective electrical signals S1, S2 supplied to the electrical terminals T1, T2 are configurable to comprise a phase-altering signal, at least a resistance measurement unit 13 is accessible to measure a respective electrical resistance R1, R2 between each of the electrical terminals T1, T2 and the reference electrical terminal T3, and at least a mathematical operation unit 14 is accessible to determine at least a mathematical relation between the respective electrical resistances R1, R2 measured between each of the electrical terminals T1, T2 and the reference electrical terminal T3.</p> |
