| 摘要 |
The present invention enables injection and activation of a dopant to a deep region without requiring a high-energy ion injection machine and without increasing thermal load during the production of a semiconductor. The present invention disperses and simultaneously activates a dopant to a deep region at a low thermal load by means of having: a first step for shallowly injecting the dopant at the surface of the semiconductor; a second step for performing activation and deep injection of the dopant in a batch process by means of liquid phase diffusion of the dopant resulting from melting the surface to a depth that is deeper than that of the dopant injection region; a third step for injecting a second dopant at the surface to a depth that is shallower than the injection depth in the second step; and a fourth step for activating the second dopant by shallowly melting the surface to a depth that is no greater than the injection depth of the second dopant.
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