发明名称 |
TRANSFER SUBSTRATE FOR FORMING METAL WIRING AND METHOD FOR FORMING METAL WIRING USING SAID TRANSFER SUBSTRATE |
摘要 |
<p>The present invention provides a transfer substrate for transferring a metal wiring material to a transfer-receiving object, the transfer substrate comprising a substrate, at least one metal wiring material formed on the substrate and an underlying metal film formed between the substrate and the metal wiring material, wherein the metal wiring material is a molded article prepared by sintering, e.g., gold powder having a purity of 99.9% by weight or more and an average particle size of 0.01 µm to 1.0 µm and the underlying metal film is composed of a metal such as gold or an alloy. The transfer substrate is capable of transferring a metal wiring material to the transfer-receiving object even at a temperature for heating the transfer-receiving object of 80 to 300°C.</p> |
申请公布号 |
EP2645409(A1) |
申请公布日期 |
2013.10.02 |
申请号 |
EP20110843493 |
申请日期 |
2011.11.18 |
申请人 |
TANAKA KIKINZOKU KOGYO K.K. |
发明人 |
OGASHIWA, TOSHINORI;KURITA, MASAAKI;NISHIMORI, TAKASHI;KANEHIRA, YUKIO |
分类号 |
H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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