发明名称 |
PROCESS FOR FABRICATING A FIELD-EFFECT TRANSISTOR DEVICE IMPLEMENTED ON A NETWORK OF VERTICAL NANOWIRES, THE RESULTING TRANSISTOR DEVICE, AN ELECTRONIC DEVICE COMPRISING SUCH TRANSISTOR DEVICES AND A PROCESSOR COMPRISING AT LEAST ONE SUCH DEVICE |
摘要 |
<p>A process for fabricating a field-effect transistor device (20) implemented on a network of vertical nanowires (24), includes: producing a source electrode (26) and a drain electrode (30) at each end of each nanowire (24) symmetrically relative to the gate electrode of each elementary transistor implemented on a nanowire; creating a gate electrode by depositing a layer (38) of conductive material around a layer (36) of dielectric material that surrounds a portion of each nanowire (24), a single conductive layer (38) being used for all of the nanowires and the thickness of the conductive layer corresponding to the gate length of the transistor device; and insulating each electrode with a planar layer (32, 34) of a dielectric material in order to form a nanoscale gate and in order to insulate the contacts of each elementary transistor between the gate and the source and the gate and the drain.</p> |
申请公布号 |
EP2643848(A2) |
申请公布日期 |
2013.10.02 |
申请号 |
EP20110790940 |
申请日期 |
2011.11.24 |
申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (C.N.R.S.) |
发明人 |
LARRIEU, GUILHEM |
分类号 |
H01L21/335;B82Y10/00;B82Y40/00;H01L21/8232;H01L29/06;H01L29/423;H01L29/739;H01L29/775 |
主分类号 |
H01L21/335 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|