Electrostatic discharge protection having parallel NPN and PNP bipolar junction transistors

摘要

A semiconductor structure and a manufacturing method and an operating method for the same are provided. The semiconductor structure comprises a first well region, a second well region, a first doped region, a second doped region, an anode, and a cathode. The second well region is adjacent to the first well region. The first doped region is on the second well region. The second doped region is on the first well region. The anode is coupled to the first doped region and the second well region. The cathode is coupled to the first well region and the second doped region. The first well region and the first doped region have a first conductivity type. The second well region and the second doped region have a second conductivity type opposite to the first conductivity type.