发明名称 Hybrid superconducting-magnetic memory cell and array
摘要 In one embodiment, the invention is a hybrid superconducting-magnetic memory cell and array. One embodiment of a memory cell includes a magnetoresistive element and at least one superconducting element wired in parallel with the magnetoresistive element. In a further embodiment, memory cells of the disclosed configuration are arranged to form a memory array.
申请公布号 US8547732(B2) 申请公布日期 2013.10.01
申请号 US201213346847 申请日期 2012.01.10
申请人 BULZACCHELLI JOHN F;GALLAGHER WILLIAM J;KETCHEN MARK B;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BULZACCHELLI JOHN F;GALLAGHER WILLIAM J;KETCHEN MARK B
分类号 G11C11/00 主分类号 G11C11/00
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