| 摘要 |
In an apparatus and method of vapor etching, a sample (S) to be etched is located in a main chamber (107) from which the atmosphere inside is evacuated. Etching gas is input into the main chamber (107) for a first period of time. Thereafter, the etching gas is evacuated from the main chamber (107) and cooling/purging gas is input into the main chamber for a second interval of time. Thereafter, the cooling/purging gas is evacuated from the main chamber (107). Desirably, the steps of inputting the etching gas into the main chamber (107) for the first period of time, evacuating the etching gas from the main chamber, inputting the cooling/purging gas into the main chamber (107) for the second period of time, and evacuating the cooling/purging gas from the main chamber are repeated until samples have been etched to a desired extent. |
