发明名称 3D integration microelectronic assembly for integrated circuit devices
摘要 A 3D interposer (and method of making same) that includes a crystalline substrate handler having opposing first and second surfaces, with a cavity formed into the first surface. A layer of insulation material is formed on the surface of the handler that defines the cavity. The cavity is filled with a compliant dielectric material. A plurality of electrical interconnects is formed through the interposer. Each electrical interconnect includes a first hole formed through the crystalline substrate handler extending from the second surface to the cavity, a second hole formed through the compliant dielectric material so as to extend from and be aligned with the first hole, a layer of insulation material formed along a sidewall of the first hole, and conductive material extending through the first and second holes.
申请公布号 US8546951(B2) 申请公布日期 2013.10.01
申请号 US201113157207 申请日期 2011.06.09
申请人 OGANESIAN VAGE;OPTIZ, INC. 发明人 OGANESIAN VAGE
分类号 H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/48
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