发明名称 |
Method of forming semiconductor device |
摘要 |
The methods include forming a semiconductor substrate pattern by etching a semiconductor substrate. The semiconductor pattern has a first via hole that exposes side walls of the semiconductor substrate pattern, and the side walls of the semiconductor substrate pattern exposed by the first via hole have an impurity layer pattern. The methods further include treating upper surfaces of the semiconductor substrate pattern, the treated upper surfaces of the semiconductor substrate pattern being hydrophobic; removing the impurity layer pattern from the side walls of the semiconductor substrate pattern exposed by the first via hole; forming a first insulating layer pattern on the side walls of the semiconductor substrate pattern exposed by the first via hole; and filling a first conductive layer pattern into the first via hole and over the first insulating layer pattern.
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申请公布号 |
US8546256(B2) |
申请公布日期 |
2013.10.01 |
申请号 |
US201113167225 |
申请日期 |
2011.06.23 |
申请人 |
JUNG DEOK-YOUNG;CHOI GIL-HEYUN;BANG SUK-CHUL;PARK BYUNG-LYUL;MOON KWANG-JIN;LIM DONG-CHAN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG DEOK-YOUNG;CHOI GIL-HEYUN;BANG SUK-CHUL;PARK BYUNG-LYUL;MOON KWANG-JIN;LIM DONG-CHAN |
分类号 |
H01L21/283 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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