FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

摘要

PURPOSE: A field effect transistor and a semiconductor device including the same are provided to improve the characteristic of mobility by forming a fin portion protruding from a substrate. CONSTITUTION: A fin portion (F) connects a source region and a drain region. A gate electrode pattern (147) intersects with the fin portion and is extended. A gate dielectric layer (145) is positioned between the fin portion and the gate electrode pattern. A semiconductor layer (131) is positioned between the fin portion and the gate dielectric layer. The dopant concentration of the semiconductor layer is different from the dopant concentration of the fin portion.