发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FORMING MICRO-VIAS PARTIALLY THROUGH INSULATING MATERIAL OVER BUMP INTERCONNECT CONDUCTIVE LAYER FOR STRESS RELIEF
摘要 PURPOSE: A semiconductor device and a method for manufacturing the same are provided to easily remove a stress by forming a micro-via made of an insulating material. CONSTITUTION: A conductive layer (134) is formed on a substrate. A first insulation layer (156) is formed on the substrate and a conductive layer. A part of the first insulation layer is removed. First micro-openings are formed in the first insulation layer. An interconnection structure is formed on the conductive layer.
申请公布号 KR20130107216(A) 申请公布日期 2013.10.01
申请号 KR20130015598 申请日期 2013.02.14
申请人 STATS CHIPPAC LTD. 发明人 YAOJIAN LIN;KANG CHEN
分类号 H01L21/60;H01L23/488 主分类号 H01L21/60
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