Deposition of group IV metal-containing films at high temperature

摘要

Disclosed are group IV metal-containing precursors and their use in the deposition of group IV metal-containing films {nitride, oxide and metal) at high process temperature. The use of cyclopentadienyl and imido ligands linked to the metal center secures thermal stability, allowing a large deposition temperature window, and low impurity contamination. The group IV metal (titanium, zirconium, hafnium)-containing f{umlaut over (upsilon)}m depositions may be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD.