发明名称 |
Photoelectric converter and manufacturing method thereof, and photoelectric conversion module |
摘要 |
A photoelectric converter in which an intermediate layer is provided between a first photoelectric-conversion-layer including a first p-type-semiconductor-layer and a first n-type-semiconductor-layer and a second photoelectric-conversion-layer including a second p-type-semiconductor-layer and a second n-type-semiconductor-layer. The intermediate layer includes an n-type-transparent conductive-oxide-film in contact with the first n-type-semiconductor-layer and a p-type-transparent-conductive oxide-film in contact with the second p-type-semiconductor-layer respectively having a bandgap equal to or higher than 1.5 electron volts. A width of a low carrier concentration region in a film thickness direction, in which a concentration of a free carrier formed near at least one of an interface on which the p-type-transparent-conductive-oxide-film comes into contact with the n-type-transparent-conductive-oxide-film and an interface on which the p-type-transparent-conductive-oxide-film comes into contact with the second p-type-semiconductor-layer is equal to or lower than 1×1018 cm-3, is equal to or less than 5 nanometers.
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申请公布号 |
US8546682(B2) |
申请公布日期 |
2013.10.01 |
申请号 |
US201113334892 |
申请日期 |
2011.12.22 |
申请人 |
KANAMOTO KYOZO;KONISHI HIROFUMI;TOKIOKA HIDETADA;YAMAMUKA MIKIO;FUCHIGAMI HIROYUKI;MITSUBISHI ELECTRIC CORPORATION |
发明人 |
KANAMOTO KYOZO;KONISHI HIROFUMI;TOKIOKA HIDETADA;YAMAMUKA MIKIO;FUCHIGAMI HIROYUKI |
分类号 |
H01L31/00 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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