发明名称 |
Temperature-controlled purge gate valve for chemical vapor deposition chamber |
摘要 |
The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition/condensation of GaCl3 and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III-V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.
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申请公布号 |
US8545628(B2) |
申请公布日期 |
2013.10.01 |
申请号 |
US20070305553 |
申请日期 |
2007.11.16 |
申请人 |
ARENA CHANTAL;WERKHOVEN CHRISTIAAN;SOITEC |
发明人 |
ARENA CHANTAL;WERKHOVEN CHRISTIAAN |
分类号 |
C30B35/00;C23C16/00;C30B13/28;C30B23/00 |
主分类号 |
C30B35/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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