发明名称 Semiconductor device and method for manufacturing the same
摘要 A semiconductor device includes an isolation layer formed on a semiconductor substrate; an active region defined by the isolation layer; at least one gate line formed to overlap with the active region; at least one first active tab formed on a first interface of the active region which overlaps with the gate line; and a first gate tab formed on a second interface facing away from the first interface in such a way as to project from the gate line.
申请公布号 US8546854(B2) 申请公布日期 2013.10.01
申请号 US20100771801 申请日期 2010.04.30
申请人 KIM JONG SU;SK HYNIX INC. 发明人 KIM JONG SU
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
代理机构 代理人
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