发明名称 |
Semiconductor devices having gate structures with conductive patterns of different widths and methods of fabricating such devices |
摘要 |
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a first dielectric pattern, a data storage pattern and a second dielectric pattern, which are sequentially stacked on a semiconductor substrate. A first conductive pattern is provided on the second dielectric pattern. A second conductive pattern having a greater width than the first conductive pattern is provided on the first conductive pattern.
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申请公布号 |
US8546870(B2) |
申请公布日期 |
2013.10.01 |
申请号 |
US20090622594 |
申请日期 |
2009.11.20 |
申请人 |
KIM JU-HYUNG;KANG CHANG-SEOK;CHANG SUNG-IL;PARK YOUNG-WOO;CHOI JUNG-DAL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JU-HYUNG;KANG CHANG-SEOK;CHANG SUNG-IL;PARK YOUNG-WOO;CHOI JUNG-DAL |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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