发明名称 |
Bipolar transistor with a collector having a protected outer edge portion for reduced based-collector junction capacitance and a method of forming the transistor |
摘要 |
Disclosed are embodiments of a transistor (e.g., bipolar junction transistor (BJT) or a heterojunction bipolar transistor (HBT)) and a method of forming the transistor with a collector region having a protected upper edge portion for reduced base-collector junction capacitance Cbc. In the embodiments, a collector region is positioned laterally adjacent to a trench isolation region within a substrate. Mask layer(s) cover the trench isolation region and further extend laterally onto the edge portion of the collector region. A first section of an intrinsic base layer is positioned above a center portion of the collector region and a second section of the intrinsic base layer is positioned above the mask layer(s). During processing these mask layer(s) prevent divot formation in the upper corner of the trench isolation region at the isolation region-collector region interface and further limit dopant diffusion from a subsequently formed raised extrinsic base layer into the collector region. |
申请公布号 |
US8546230(B2) |
申请公布日期 |
2013.10.01 |
申请号 |
US201113296496 |
申请日期 |
2011.11.15 |
申请人 |
ADKISSON JAMES W.;HARAME DAVID L.;LEIDY ROBERT K.;LIU QIZHI;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ADKISSON JAMES W.;HARAME DAVID L.;LEIDY ROBERT K.;LIU QIZHI |
分类号 |
H01L21/331;H01L29/66 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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