GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE

摘要

PURPOSE: A gallium nitride based semiconductor device is provided to improve the crystalline quality of semiconductor layers by arranging a middle layer between gallium nitride layers. CONSTITUTION: A lower gallium nitride layer (15) is positioned on the surface of a gallium nitride substrate. An n-type upper gallium nitride layer (19) is positioned on the upper part of the lower gallium nitride layer. A middle layer (17) is formed between the lower gallium nitride layer and an upper gallium nitride layer. The middle layer contains aluminum. The band gap of the middle layer is wider than the band gap of the gallium nitride layers. [Reference numerals] (b) Doping concentration (a. u.)