Read error recovery for solid-state memory based on cumulative background charges

摘要

A read error is determined that affects a page of solid-state, non-volatile memory. The page is associated with a selected word line that crosses a plurality of NAND strings coupled to respective grounds and bit lines. Word lines of the memory are ordered from a lower end proximate the ground to a higher end proximate the bit lines. Cumulative background charges each associated with one of the memory cells of the page are determined. The cumulative background charges are based on charge levels of respective cells of a plural subset of the word lines that are lower in order than the selected word line. A recovery operation is performed on the page using the cumulative background charges.