| 摘要 |
A pattern-formed substrate is provided. The pattern-formed substrate includes a substrate base, an organic thin film and an inorganic resist film stacked on the substrate base in this order, and patterns having predetermined aspect ratios formed on the organic thin film and the inorganic resist film, respectively. The pattern of the organic thin film is formed by selective etching using the pattern of the inorganic resist film as a mask.
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