WORD LINE TRANSISTOR STRENGTH CONTROL FOR READ AND WRITE IN SPIN TRANSFER TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY

摘要

Systems, circuits and methods for controlling word line voltage at a word line transistor in Spin Transfer Torque Magnetoresistive Random Access Memory (STT- MRAM) are disclosed. A first voltage can be supplied to the word line transistor for write operations. A second voltage, which is less than the first voltage, can be supplied to the word line transistor during read operations.