| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device the switching characteristics of which can be improved.SOLUTION: In the manufacturing method of an RC-IGBT where an IGBT and an FWD are provided on the same substrate, the front surface element structure of IGBT and FWD is formed, at first, on the front surface of a semiconductor substrate. Subsequently, the IGBT region side on the front surface of the semiconductor substrate is shielded by a first shield mask, and only the FWD region is irradiated with light ions. Thereafter, the FWD region side on the back surface of the semiconductor substrate is shielded by a second shield mask, and only the IGBT region is irradiated with light ions. Consequently, a first lifetime control region 10-1 is formed in the collector side A2 of the IGBT region A1-A2. A second lifetime control region 10-2 is formed on the anode side B1 of the FWD region B1-B2. Consequently, the carrier lifetime of the IGBT is long on the emitter side and short on the collector side. The carrier lifetime of the FWD is short on the anode side and long on the cathode side. |
