| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which allows reduction in an area.SOLUTION: Each of a plurality of memory units includes a first transistor (SDTr), a plurality of memory cell transistors (MTr), and a second transistor (SSTr) which are connected in series between first and second ends. A control gate electrode is connected to each one of the memory transistors whose first end is connected to a bit line. First and third drivers (SGDSEL and SGSSEL) output voltage to be applied to the first and second transistors. Second and fourth drivers (SGDUSEL and SGSUSEL) output voltage to be applied to the first and second transistors being not selected. A selection circuit (92) selectively connects a gate electrode of each of the first transistors of the plurality of memory units to the first driver, selectively connects to the second driver, selectively connects a gate electrode of each of the second transistors of the plurality of memory units to the third driver, and selectively connects to the fourth driver. |
