| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor device, along with its manufacturing method, capable of preventing breakage of the entire chip even if a unit cell is broken, for improved yield.SOLUTION: A power semiconductor device 20 includes an epitaxial layer 1, a source electrode 5, a source wiring layer 7, and an intermediate layer 6. The epitaxial layer 1 includes a first impurity range 1b of first conductive type, a second impurity range 2 of second conductive type, and a third impurity range 3 which is first conductive type and is separated from the first impurity range 1b by the second impurity range 2. The source electrode 5 contacts to the third impurity range 3. The source wiring layer 7 supplies a current to the source electrode 5. The intermediate layer 6 is provided between the source electrode 5 and the source wiring layer 7, and faces a gap. The material constituting the intermediate layer 6 has a melting point lower than the material constituting the source wiring layer 7. |
